A new Schmitt trigger circuit in a 0.13-μm 1/2.5-V CMOS process to receive 3.3-V input signals

摘要

A new Schmitt trigger circuit, which is implemented by low-voltage devices to receive the high-voltage input signals without gate-oxide reliability problem, is proposed. The new proposed circuit, which can be operated in a 3.3-V signal environment without suffering high-voltage gate-oxide overstress, has been fabricated in a 0.13-μm 1/2.5-V 1P8M CMOS process. The experimental results have confirmed that the measured transition threshold voltages of the new proposed Schmitt trigger circuit are about 1 and 2.5 V, respectively. The new proposed Schmitt trigger circuit is suitable for mixed-voltage input-output interfaces to receive input signals and reject input noise.