机译:X频段6位SiGe BICMOS多功能芯片,具有+12 dBm IP1DB和平坦增益响应
Sabanci Univ Fac Engn & Nat Sci TR-34956 Istanbul Turkey;
Sabanci Univ Fac Engn & Nat Sci TR-34956 Istanbul Turkey;
Sabanci Univ Fac Engn & Nat Sci TR-34956 Istanbul Turkey;
Sabanci Univ Fac Engn & Nat Sci TR-34956 Istanbul Turkey;
Phase shifters; attenuators; BiCMOS integrated circuits; linearity; transceivers; phased arrays;
机译:用于有源相控阵雷达的X波段大功率SiGe BiCMOS多功能芯片
机译:一个273.5-312-GHz信号源,具有2.3 dBm峰值输出功率的130nm SiGe BICMOS工艺
机译:采用0.12 SiGe BiCMOS工艺的19.4 dBm Q波段E类功率放大器
机译:在0.25μmSiGe BiCMOS中具有+3.5 dBm IP1dB的5-13 GHz 6位矢量和移相器
机译:在0.13-μmsige bicmos中的6-18 GHz 6位主动移相器