机译:离子种类比对栅极增强等离子体源离子注入的影响
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;
State Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams, Dalian University of Technology, Dalian 116023, China;
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;
plasma simulation; plasma sheath; two-ion fluid model; grid-enhanced plasma resource ion implantation;
机译:离子种类比对栅极增强等离子体源离子注入的影响
机译:离子种类比对栅极增强等离子体源离子注入的影响
机译:栅格和目标半径以及离子中性碰撞对栅格增强等离子体源离子注入过程的影响
机译:脉冲和直流等离子体浸没离子注入的多种注入
机译:通过等离子体注入氧气和等离子体浸没离子注入进行分离,以形成绝缘体上硅。
机译:不同的精子来源和参数会影响胚胎植入前胞浆内精子注射的结果
机译:网格增强等离子体源离子注入中的网格阴影效应