Monitoring of SiC MOSFET junction temperature with on-state voltage at high currents

摘要

A junction temperature monitoring method has been presented based on the on-state voltage at high currents. With a simplified physical model, this method mapped the relationship between junction temperature and on-state voltage. The tough calibration and signal sensing issues are solved. Verified by body-diode voltage detecting method, the presented method shows a good performance and high accuracy, in the meantime, it would not change the modulation strategy and topology of the converter.