Laser and thermal vapor deposition of metal sulfide (NiS, PdS) films and in situ gas-phase luminescence of photofragments form M(S_2COCHMe_2)_2

摘要

NiS and PdS thin films are prepared at 10~-2 Torr from the single-source precursors M(S_2- COCHMe_2)_2, M=Ni and Pd. Two different vapor deposition processes, photochemical and thermal, are employed. Gas-phase emission spectroscopy is used during the photochemical deposition to identify the two elemental components of the final materials, the metal atom and sulfur, in the gas phase.