Phenacyl–Thiophene and Quinone Semiconductors Designed for Solution Processability and Air-Stability in High Mobility n-Channel Field-Effect Transistors

Joseph A. Letizia Dr. Scott Cronin Rocio Ponce Ortiz Dr. Antonio Facchetti Dr. Mark A. Ratner Prof. Tobin J. Marks Prof.

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Phenacyl–Thiophene and Quinone Semiconductors Designed for Solution Processability and Air-Stability in High Mobility n-Channel Field-Effect Transistors

机译：设计用于高迁移率n沟道场效应晶体管中溶液加工性和空气稳定性的苯酚-噻吩和醌半导体

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来源
《Chemistry - A European Journal》 |2010年第6期|p.1-18|共18页
作者
Joseph A. Letizia Dr. Scott Cronin Rocio Ponce Ortiz Dr. Antonio Facchetti Dr. Mark A. Ratner Prof. Tobin J. Marks Prof.;
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正文语种 eng
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关键词
phenacylndash; thiophene; polymers; quinones; semiconductors;

机译：苯甲酰噻吩;聚合物;醌;半导体;

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1. Phenacyl-Thiophene and Quinone Semiconductors Designed for Solution Processability and Air-Stability in High Mobility n-Channel Field-Effect Transistors [J] . Letizia JA, Cronin S, Ortiz RP, Chemistry: A European journal . 2010,第6期

机译：设计用于高迁移率n沟道场效应晶体管的溶液加工性和空气稳定性的苯酚-噻吩和醌半导体
2. Thiophene-Diketopyrrolopyrrole-Based Quinoidal Small Molecules as Solution-Processable and Air-Stable Organic Semiconductors: Tuning of the Length and Branching Position of the Alkyl Side Chain toward a High-Performance n-Channel Organic Field-Effect Transistor [J] . Wang Chao, Qin Yunke, Sun Yuanhui, ACS applied materials & interfaces . 2015,第29期

机译：噻吩-二酮基吡咯并吡咯基喹啉小分子作为溶液可加工和空气稳定的有机半导体：烷基侧链的长度和支化位置朝着高性能n通道有机场效应晶体管的方向调整
3. Arylacetylene end capped naphthodithiophene diimide (NDTI)-based semiconductors for air-stable, solution-processed n-channel organic field-effect transistors: Effect of terminal aryl groups on charge transport [J] . Ran Huijuan, Chen Lijuan, Yang Xueli, Dyes and Pigments . 2019,第期

机译：芳基乙炔末端盖上萘二甲基二酰亚胺（NDTI）基于空气稳定，加工的N沟道有机场效应晶体管的基于半导体：末端芳基对电荷运输的影响
4. Organic field-effect transistors with solution-processible thiophene/phenylene based-oligomer derivative films [C] . Hoichang Yang, Jason Locklin, Birendra Singh, Organic Field-Effect Transistors VI; Proceedings of SPIE-The International Society for Optical Engineering; vol.6658 . 2007

机译：具有溶液可加工的噻吩/亚苯基低聚物衍生物薄膜的有机场效应晶体管
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities [O] . Xia Kong, Xia Zhang, Dameng Gao, 2015

机译：基于高迁移率和平衡载流子迁移率的溶液加工的八萘氧基取代的三（酞菁基）euro半导体的空气稳定双极性场效应晶体管
7. Synthesis and Characterization of Diperfluorooctyl-Substituted Phenylene-Thiophene Oligomers as n-Type Semiconductors. Molecular Structure-Film Microstructure-Mobility Relationships, Organic Field-Effect Transistors, and Transistor Nonvolatile Memory Elements [O] . -1

机译：DIPELFOLOROO辛基取代的苯基 - 噻吩低聚物作为N型半导体的合成与表征。分子结构膜微结构 - 迁移率关系，有机场效应晶体管和晶体管非易失性存储器元件
8. Fabrication of n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with0.2 Micrometer Gate Lengths in 500 A Thin Film Silicon on Sapphire. (Reannouncement with New Availability Information) [R] . de la Houssaye, P. R., Offord, B. W., Minter, J. P., 1992

机译：在蓝宝石上的500 a薄膜硅中制造具有0.2微米栅极长度的n沟道金属氧化物半导体场效应晶体管。（重新公布新的可用性信息）

Phenacyl–Thiophene and Quinone Semiconductors Designed for Solution Processability and Air-Stability in High Mobility n-Channel Field-Effect Transistors

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