High on/off ratio p-type field-effect transistor enabled by a single heavily Al-doped α-Si_3N_4 nanowire

摘要

For the first time, we fabricated p-type FETs using an individual heavily Al-doped α-Si_3N_4 NW with a single-crystal structure. The results show that despite a heavy Al-doping level, a typical device still exhibits high performance with an extremely high on/off ratio, 10~3, at V_(ds) = -5 V.