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High-temperature oxidation behaviour of Ti3Si(1−x)AlxC2 in air

机译:Ti 3 Si (1-x) Al x C 2 在空气中的高温氧化行为

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摘要

The oxidation behaviours of bulk Ti3Si(1−x)Al x C2 prepared by hot pressing were investigated. The results showed that the isothermal oxidation behaviour of Ti3SiC2 obeyed a parabolic law between 900 and 1100°C, and followed a two-step parabolic rate law between 1200°C and 1300°C. The cyclic oxidation behaviour of material is assumed to obey a three-step parabolic rate law at 1100°C and 1200°C. The calculated activation energy of isothermal oxidation is 101·43 kJ·mol−1. The oxide layers consisted of a mass of α-Al2O3 and little TiO2 and SiO2 are observed on Ti3SiC2 as a dense and adhesive protect scale. The oxidation mechanism varies with the additive aluminum that greatly improves the oxidation resistance of Ti3SiC2.
机译:通过热压法制备了块状Ti 3 Si (1-x) Al x C 2 的氧化行为调查。结果表明,Ti 3 SiC 2 的等温氧化行为在900〜1100℃之间符合抛物线规律,在1200℃之间遵循两步抛物线速率规律。 C和1300℃。假定材料的循环氧化行为在1100°C和1200°C时遵循三步抛物线速率定律。等温氧化的活化能为101·43 kJ·mol -1 。氧化层由大量的α-Al 2 O 3 组成,少量的TiO 2 和SiO 2 在Ti 3 SiC 2 上观察到,它是致密且具有粘性的保护垢。氧化机制随铝的添加而变化,从而大大提高了Ti 3 SiC 2 的抗氧化性。

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