Thermoluminescence properties of γ-irradiated Bi doped BaS nanostructures

摘要

Bismuth doped barium sulphide nanocrystallities were prepared and characterized by XRD. Thermoluminescence (TL) studies of these samples after exposure to gamma radiation were carried out. The TL glow curve of the phosphors have two peaks at 403 K and 658 K while in their bulk counterparts these peaks were reported at 486 K and 570 K (Rao 1986). We noted that TL intensity increases with gamma exposure time in the range 30 min — 41 h which may be explained on the basis of track interaction model (TIM) and a high surface to volume ratio for the nanostructures. The kinetic parameters at various heating rates namely activation energy (E), order of kinetics (b) and frequency factor (s) of BaS: Bi (0.4 mol%) sample was determined using Chen’s method. The deconvolution of curve was done using the GCD function suggested by Kitis. The effect of different heating rates and different amount of dose has also been discussed.