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Microstructure and microwave dielectric properties of (Zn1−xMgx)2SiO4 ceramics

机译:(Zn 1-x Mg x 2 SiO 4 陶瓷的微观结构和微波介电性能

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(ZnMg)2SiO4 powders was prepared by the sol-gel process, and the microstructure and dielectric properties of (Zn1−xMgx)2SiO4 microwave materials were investigated systematically. TG-DSC and XRD analyzes for gels indicate that the (ZnMg)2SiO4 with pure willemite phase could be obtained at low temperature of 850°C. Further, XRD illustrates that just small amounts of Mg can be incorporated into Zn2SiO4 lattice, and the solid solution limit of Mg in Zn2SiO4 is about x = 0·1. By appropriate Mg substitution for Zn, the sintering range is widened and the sintering temperature of Zn2SiO4 ceramics can be lowered effectively. SEM shows that Mg-substitution for Zn can promote the grain growth of Zn2SiO4. Moreover, the microwave dielectric properties strongly depended on the substitution content of Mg and sintering temperatures. (Zn0·8Mg0·2)2SiO4 dielectrics sintered at 1170°C show the condense microstructure with small uniform grains and best microwave properties: ɛ r = 6·3, Q × f = 189800 GHz and τ f = −63 ppm/°C.
机译:采用溶胶-凝胶法制备了(ZnMg) 2 SiO 4 粉末,并制备了(Zn 1-x Mg系统研究了 x 2 SiO 4 微波材料。凝胶的TG-DSC和XRD分析表明,在850℃的低温下可得到纯硅铝石相的(ZnMg) 2 SiO 4 。此外,X射线衍射表明,只有少量的Mg可以掺入Zn 2 SiO 4 晶格,并且Mg在Zn 2 SiO 4 约为x = 0·1。通过适当的镁替代锌,可以扩大烧结范围,有效降低Zn 2 SiO 4 陶瓷的烧结温度。 SEM结果表明,Mg替代Zn可以促进Zn 2 SiO 4 的晶粒长大。此外,微波介电性能强烈取决于Mg的取代含量和烧结温度。在1170°C下烧结的(Zn 0·8 Mg 0·2 2 SiO 4 电介质显示出具有均匀小晶粒和最佳微波性能的组织:: r = 6·3,Q×f = 189800 GHz,τ f = -63 ppm /°C。

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