Detection of H2S gas at lower operating temperature using sprayed nanostructured In2O3 thin films

摘要

Nanostructured indium oxide (In2O3) thin films were prepared by spray pyrolysis (SP) technique. X-ray diffraction (XRD) was used to investigate the structural properties and field emission scanning electron microscopy (FESEM) was used to confirm surface morphology of In2O3 films. Measurement of electrical conductivity and gas sensing performance were conducted using static gas sensing system. Gas sensing performance was studied at different operating temperature in the range of 25–150 °C for the gas concentration of 500 ppm. The maximum sensitivity (S = 79%) to H 2 S was found at lower temperature of 50 °C. The quick response (4 s) and fast recovery (8 s) are the main features of this film.