Synchrotron radiation excited etching of silicon surface studied by velocity distribution measurements of desorbed species

摘要

The neutral species desorbed from the surface in the etching reaction of silicon have been identified from the measurements of their velocity distributions using a time-of-flight (TOF) technique combined with an electron bombardment ionization mass spectrometry. The preliminary measurements of the velocity distributions indicate that the desorbed species formed in the etching reactions of Si with XeF_2 are essentially identical for the undulator light (h v = 35.8eV) on and off although irradiation of synchrotron radiation (SR) promotes the etching reaction.