Preparation of ZnO thin films using undulator and ArF excimer laser

摘要

We are successful in preparing ZnO thin films from diethylzinc (DEZn) and oxygen gas at very low temperatures using undulator radiation (UR) and ArF excimer laser (EL). The substrate temperature was varied from -150 to 150℃. The composition ratio and carbon content in the films are dependent on the source gas ratio and the substrate temperature. Different behaviors were observed for the irradiation of UR and EL. Carbon— free films with high optical transmission were obtained. Adsorption of precursors on the growing surface is suggested in the growth process.