RADIATION γ ANNEALING OF SILICON CARBIDE IRRADIATED IN A BOR-60 REACTOR

摘要

The results of irradiating at 400-800℃ silicon carbide, having the β-SiC cubic modification, in different channels of the BOR-60 reactor, where the radiation composition factor was varied over the range 2.3-6.5, are discussed. The expansion of the crystal lattice of β-SiC in the saturation stage is taken as the measure of damage. Data on isochronous annealing are used to investigate the energy spectrum for activation of annealing of defects - the smearing at high and low energy under the influence of γ radiation. The results are compared with data from similar irradiation of silicon carbide in MR and BR-10 and with data on the influence of γ radiation on other materials and their properties.