Using its technology for high efficiency creation, Sanyo Electric Co.,rnLtd. has produced at the research level a Heterojunction for Intrinsic Layer (HIT) solar cell with an energy conversion efficiency of 22.8 percent and a profile of 0.98μm, which is less than half of the 200μm HIT it previously developed with a conversion efficiency of 23 percent. To achieve the best conditions in order to greatly increase the open-circuit voltage (Voc) while reducing recombination loss,rnthe structure that places more emphasis on voltage during the design of the device was selected.
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