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Dow Corning Toray Markets Three-Grade 150mm SiC Wafer

机译:道康宁东丽公司销售三级150mm SiC晶片

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Dow Corning Toray Co., Ltd. has recently released three grades of 150-mm (6-inch) diameter silicon carbide (SiC) wafers, letting users to select the grade of the wafer quality. The company offers products in three grades: Prime Standard, Prime Select, and Prime Ultra, which are classified according to the amount of defects. Dow Corning Toray follows strict standards in rating wafer defects. This makes it possible for users to select an optimal SiC wafer based on the necessary performance and cost. SiC wafer defects are critical because they not only reduce device yields, but also degrade the device characteristics. In general, only the micropipe density (MPD) is used as a standard. In addition, the company uses threading screw dislocations (TSD) and basal plane dislocations (BPD) as standards as well. SiC power semiconductors have been actively researched and developed in recent years as a technology that would reduce power conversion losses and effectively use energy.
机译:道康宁东丽有限公司最近发布了三种等级的直径150毫米(6英寸)的碳化硅(SiC)晶圆,让用户可以选择晶圆质量等级。该公司提供三种等级的产品:Prime Standard,Prime Select和Prime Ultra,它们根据缺陷的数量进行分类。道康宁Toray遵循严格的晶圆缺陷评级标准。这使用户可以根据必要的性能和成本选择最佳的SiC晶片。 SiC晶圆缺陷至关重要,因为它们不仅会降低器件产量,而且还会降低器件特性。通常,仅将微管密度(MPD)用作标准。此外,该公司还使用螺纹螺钉错位(TSD)和基底平面错位(BPD)作为标准。 SiC功率半导体作为一种可以减少功率转换损耗并有效利用能源的技术,近年来得到了积极的研究和开发。

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    《Asia electronics industry 》 |2014年第12期| 41-41| 共1页
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