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Elucidation of Surface Nano-hillocks by Localized Plasma Expansion

机译:通过局部等离子体膨胀阐明表面纳米小丘

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For the time being, the creation of surface nano-structures has become an important technological process which plays aparamount role in the electronic devices, as it has a very remarkable feature that they are used in etching without usingchemicals. Irradiation of silicon oxide single crystal with slow highly charged ions can produce surface nano-hillocks. Theformationmechanism of the created nano-hillocks is a topic of debate. One of the suggested formationmechanisms is a plasmaexpansion approach. The latter will be used to explain the creation of surface nano-hillocks in silicon oxide single crystalusing a fully classical plasma model. For this purpose, classical hydrodynamic ion fluid equations along with Maxwellian ornon-Maxwellian electrons distributions are solved numerically to obtain the expansion profiles of the number density, fluidvelocity, and electrostatic potential. The relevance of different plasma parameters such as temperature and density ratios,superthermal, and non-extensive parameters is highlighted on the expansion profiles.
机译:暂时,表面纳米结构的创建已成为扮演的重要技术过程在电子设备中的最重要作用,因为它具有非常出色的功能,它们在不使用的情况下用于蚀刻化学品。氧化硅单晶与缓慢带电离子的照射可以产生表面纳米小丘。这创造的纳米小丘的形成机制是辩论的主题。其中一个建议的形成机制是等离子体扩展方法。后者将用于解释在氧化硅单晶中的表面纳米小丘的创建使用完全古典的等离子体模型。为此目的,经典的流体动力离子流体方程以及Maxwellian或非霍韦斯电子分布在数值上进行解决以获得数量密度,流体的膨胀轮廓速度和静电潜力。不同血浆参数如温度和密度比率的相关性,在扩展配置文件上突出显示了超高热和非广泛参数。

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