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首页> 外文期刊>Applied Surface Science >Reversal of charge transfer direction at gold/copper phthalocyanine film interface on post deposition annealing: A vibrational spectroscopic study
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Reversal of charge transfer direction at gold/copper phthalocyanine film interface on post deposition annealing: A vibrational spectroscopic study

机译:沉积后退火后金/铜酞菁膜界面的电荷转移方向反转:振动光谱研究

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摘要

Charge transfer interaction at the gold (Au)/copper phthalocyanine (CuPc) interface, with Au on CuPc film, was investigated using vibrational techniques - Fourier Transform Infra Red and Raman spectroscopy, in combination with X- ray photoelectron spectroscopy. The charge transfer direction at this interface was found to be changing after annealing of the CuPc film, as compared to that before annealing. Molecule to metal charge transfer at the Au/CuPc interface observed for the as deposited film was found to be reversing to metal to molecule charge transfer for the annealed film. This reversal of charge transfer direction in the latter was attributed to the modified electronic structure/work function of the CuPc film and the varying orientation of CuPc molecules at the interface, brought about by the increased surface roughness, change in morphology, etc. The reversal in charge transfer direction was suggested to be supporting the reduction in parasitic contact resistance at the Au/CuPc interface for a top contact OFET with the annealed CuPc film, as compared to that with the as deposited film. This study demonstrates the influence of morphology of the organic semiconductor film on the charge transfer behaviour at the metal/organic semiconductor interface.
机译:采用振动技术研究,用AU上的金(Au)/铜酞菁(Cupc)界面的金(Au)/铜酞菁(Cupc)界面的电荷转移相互作用 - 傅里叶变换红外线红色和拉曼光谱。与退火之前的情况相比,发现该界面的电荷转移方向在Cupc膜的退火后变化。发现用于作为沉积膜观察到的Au / Cupc接口的金属电荷转移的分子逆转到金属与退火膜的分子电荷转移。后者的电荷转移方向的这种反转归因于Cupc膜的改性电子结构/功函数以及界面处的Cupc分子的变化取向,由增加的表面粗糙度,形态变化等引起的逆转建议在与作为沉积膜的沉积膜相比,在Au / Cupc接口上支撑Au / Cupc接口的寄生接触电阻的降低,与用作沉积的薄膜相比,在Au / Cupc接口上支撑寄生接触电阻。该研究表明了有机半导体膜的形态对金属/有机半导体界面处的电荷转移行为的影响。

著录项

  • 来源
    《Applied Surface Science》 |2021年第15期|148743.1-148743.9|共9页
  • 作者单位

    Bhabha Atom Res Ctr Tech Phys Div Mumbai 400085 Maharashtra India|Homi Bhabha Natl Inst Mumbai 400094 Maharashtra India;

    Bhabha Atom Res Ctr High Pressure & Synchrotron Radiat Phys Div Mumbai 400085 Maharashtra India;

    Homi Bhabha Natl Inst Mumbai 400094 Maharashtra India|Bhabha Atom Res Ctr Chem Div Mumbai 400085 Maharashtra India;

    Homi Bhabha Natl Inst Mumbai 400094 Maharashtra India|Bhabha Atom Res Ctr Solid State Phys Div Mumbai 400085 Maharashtra India;

    Bhabha Atom Res Ctr Tech Phys Div Mumbai 400085 Maharashtra India;

    Bhabha Atom Res Ctr Chem Div Mumbai 400085 Maharashtra India;

    Bhabha Atom Res Ctr Tech Phys Div Mumbai 400085 Maharashtra India;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Charge transfer reversal; Annealed CuPc films; Vibrational techniques; Injection barrier; Contact resistance; OFETs;

    机译:电荷转移逆转;退火Cupc薄膜;振动技术;注入屏障;接触电阻;ofets;

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