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机译:沉积后退火后金/铜酞菁膜界面的电荷转移方向反转:振动光谱研究
Bhabha Atom Res Ctr Tech Phys Div Mumbai 400085 Maharashtra India|Homi Bhabha Natl Inst Mumbai 400094 Maharashtra India;
Bhabha Atom Res Ctr High Pressure & Synchrotron Radiat Phys Div Mumbai 400085 Maharashtra India;
Homi Bhabha Natl Inst Mumbai 400094 Maharashtra India|Bhabha Atom Res Ctr Chem Div Mumbai 400085 Maharashtra India;
Homi Bhabha Natl Inst Mumbai 400094 Maharashtra India|Bhabha Atom Res Ctr Solid State Phys Div Mumbai 400085 Maharashtra India;
Bhabha Atom Res Ctr Tech Phys Div Mumbai 400085 Maharashtra India;
Bhabha Atom Res Ctr Chem Div Mumbai 400085 Maharashtra India;
Bhabha Atom Res Ctr Tech Phys Div Mumbai 400085 Maharashtra India;
Charge transfer reversal; Annealed CuPc films; Vibrational techniques; Injection barrier; Contact resistance; OFETs;
机译:铜酞菁薄膜沉积后退火效应的扫描隧道显微镜研究
机译:紫外辐射下铜酞菁薄膜的沉积后退火诱导取向及其电学性质
机译:从电学研究中,退火对硫化锰,酞菁铜和多层硫化铜-酞菁薄膜的活化能的影响
机译:沉积退火对含有四叔族铜酞菁薄膜光学,电气和形态学研究的影响
机译:固/液界面上分子相互作用和带电行为的非线性振动光谱研究。
机译:锰酞菁之间的电荷转移:散装材料和界面
机译:铜薄膜电沉积中的电荷转移与质量转移机制:结构探索