机译:氢氟酸蚀刻时间对n型多孔硅结构和形态的影响
Comenius Univ Fac Med Inst Med Phys Biophys Informat & Telemed Sasinkova 2 Bratislava 81372 Slovakia;
Slovak Univ Technol Bratislava Fac Chem & Food Technol Bratislava Slovakia;
Comenius Univ Fac Med Inst Med Phys Biophys Informat & Telemed Sasinkova 2 Bratislava 81372 Slovakia;
Slovak Univ Technol Bratislava Inst Elect & Photon Bratislava Slovakia;
Comenius Univ Fac Med Inst Med Phys Biophys Informat & Telemed Sasinkova 2 Bratislava 81372 Slovakia;
Comenius Univ Fac Math Phys Informat Bratislava Slovakia;
Int Laser Ctr Bratislava Slovakia;
Slovak Acad Sci Inst Phys Bratislava Slovakia;
Comenius Univ Fac Med Inst Med Phys Biophys Informat & Telemed Sasinkova 2 Bratislava 81372 Slovakia|Slovak Univ Technol Bratislava Fac Elect Engn & Informat Technol Bratislava Slovakia;
Slovak Acad Sci Inst Phys Bratislava Slovakia;
Slovak Acad Sci Inst Phys Bratislava Slovakia;
Comenius Univ Fac Med Inst Histol & Embryol Bratislava Slovakia;
Slovak Acad Sci Inst Phys Bratislava Slovakia;
Porous silicon; N-type silicon; FT IR spectroscopy; Hydrofluoric acid; Methanol; X-ray photoelectron spectroscopy;
机译:氢氟酸中pn结结构中n型硅的选择性刻蚀及其在硅纳米线制备中的应用
机译:氢氟酸中高掺杂n型晶体硅的意外蚀刻速率高
机译:通过用氢氟酸 - 甲醛溶液电化学蚀刻获得的多孔硅基质内的ZnO的原位生长
机译:光电化学阳极蚀刻蚀刻时间对P型多孔硅纳米结构表面结构性能的影响
机译:一维硅纳米线的细胞响应以及在纳米线生长之前用氢氟酸蚀刻硅(111)基板的效果。
机译:从硅工程到多孔硅和硅金属辅助化学刻蚀的纳米线:Ag的大小和作用电子清除率对形貌控制及机理的影响
机译:刻蚀时间对光电化学法制备N型多孔硅光学和形貌特征的影响