机译:近SiC / SiO_2接口区域硅间质缺陷的载流子捕获和排放性能
Dalian Univ Technol Key Lab Intelligent Control & Optimizat Ind Equip Fac Elect Informat & Elect Engn Sch Control Sci & Engn Minist Educ Dalian 116024 Peoples R China;
Dalian Univ Technol Key Lab Intelligent Control & Optimizat Ind Equip Fac Elect Informat & Elect Engn Sch Control Sci & Engn Minist Educ Dalian 116024 Peoples R China;
Dalian Univ Technol State Key Lab Mat Modificat Laser Ion & Electron Minist Educ Dalian 116024 Peoples R China;
Dalian Univ Technol Key Lab Intelligent Control & Optimizat Ind Equip Fac Elect Informat & Elect Engn Sch Control Sci & Engn Minist Educ Dalian 116024 Peoples R China;
4H-SiC; Near interface trap; Silicon interstitial defects; First principle; Carrier capture and emission;
机译:热氧化和NO退火的SiO_2 / 4H-SiC中界面态的电子俘获和发射特性
机译:中性点缺陷在块体4H-SiC中和4H-SiC / SiO_2界面上的载流子迁移率退化中的作用:使用格林函数的第一性原理研究
机译:SiC n沟道金属氧化物半导体场效应晶体管的SiC / SiO_2界面上由热载流子应力产生的缺陷的电检测磁共振研究
机译:n型3C-SiC / SiO_2中的界面缺陷:氧化多孔碳化硅单晶的EPR研究
机译:间隙氢的旋转运动和硅中氢修饰晶格缺陷的振动寿命的红外研究。
机译:p-i-n非晶硅太阳能电池中p型a-SiC:H和ZnO:Al之间的界面改性效应
机译:理论探索的新型缺陷:siC中的硅间隙团簇
机译:呼吸模式晶格弛豫与硅中深层电子能级的载流子发射和捕获相关