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首页> 外文期刊>Applied Surface Science >A first-principles study of Cl_2, PH_3, AsH_3, BBr_3 and SF_4 gas adsorption on MoS_2 monolayer with S and Mo vacancy
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A first-principles study of Cl_2, PH_3, AsH_3, BBr_3 and SF_4 gas adsorption on MoS_2 monolayer with S and Mo vacancy

机译:具有S和Mo空缺的MOS_2单层的CL_2,PH_3,ASH_3,BBR_3和SF_4气体吸附的第一原理研究

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摘要

The intrinsic influence of gas sensing nature of S vacancy (V-S) and Mo vacancy (V-Mo) MoS2 monolayer plays an important vital role for sensing highly toxic gases. A systematic study was carried out to act its ability to be a gas sensor, which can be benefited from its high surface to volume ratio similar to graphene. The highly toxic gas molecules such as Cl-2, PH3, AsH3, BBr3 and SF4 was selected to examine the affinity with V-S and V-Mo MoS2 monolayer based on first principle calculations. To explore the sensing capacity and electronic property of V-S and V-Mo MoS2 monolayer the geometrical structures, adsorption energy, adsorption distance, charge transfer and density of states were analyzed and discussed. The results indicate that all the gas molecules are allowed to adsorb on V-S and V-Mo MoS2 monolayer through Van Der Waals interaction. Among all these gases, PH3 adsorption on V-Mo MoS2 monolayer exhibits relatively high adsorption energy of -1.8082 eV and charge transfer of -0.56 e, followed by the SF4 on V-S and V-Mo MoS2 monolayer showing enhanced adsorption energy of 0.9366 eV and -0.8052 eV and charge transfer of 0.029 e and 0.064 e respectively. PH3 and BBr3 adsorption on V-Mo MoS2 monolayer shows more change in the conductivity when compared to other gas molecules. Thus, V-S and V-MO MoS2 monolayer are producing beneficial results for sensing PH3, BBr3 and SF4 gas molecules than Cl-2 and AsH3.
机译:S空位(V-S)和Mo空位(V-Mo)MOS2单层的气体传感性质的内在影响对感测高毒性气体起着重要的重要作用。进行了系统研究以起作用其成为气体传感器的能力,这可以受益于其高表面与类似石墨烯的体积比。选择具有Cl-2,PH3,Ash3,BBR3和SF4的高毒气体分子以基于第一原理计算来检查与V-S和V-MO MOS2单层的亲和力。为了探讨V-S和V-MO MOS2单层的感测能力和电子性能,分析并讨论了各种地几何结构,吸附能量,吸附距离,电荷转移和密度。结果表明,所有气体分子都可以通过范德华相互作用对V-S和V-Mo MOS2单层吸附。在所有这些气体中,对V-Mo MOS2单层的PH3吸附在-1.8082 EV和电荷转移的相对高的吸附能,其次是VS和V-MO MOS2单层的SF4,显示出增强的吸附能量为0.9366eV和-0.8052 EV和电荷转移为0.029 e和0.064 e。与其他气体分子相比,V-MO MOS2单层的PH3和BBR3吸附在导电率下显示出更多的变化。因此,V-S和V-MO MOS2单层生产比Cl-2和Ash3的pH3,BBR3和SF4气体分子产生有益的结果。

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