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First-principle study of gas adsorption on SiGe monolayer as sensor applications

机译:SiGe单层上气体吸附作为传感器应用的第一性原理研究

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Using first-principles calculation within density functional theory, the adsorption properties of gas (CO2, CO, H2O, NH3) – SiGe monolayer systems are chosen to investigate and the most sensitive gas and adsorption site (Si site for CO2, Center site for CO, Ge site for NH3, and Ge site for H2O ) are discovered. The adsorption energy, band gap, and charge transfer are all considered. Through research, the results indicate that SiGe is most sensitive to NH3 while H2O also show an impressive adsorption property. NH3 adsorption possess large adsorption energy that is suitable to be used as sensing material in gas device. And the physical adsorption model is determined through considering adsorption distance, adsorption energy, and Charge density difference (CDD) plot, moreover, the physical adsorption is profited to the application of gas sensor. Our theoretical results indicates that monolayer SiGe is a promising candidate for gas sensing applications.
机译:使用密度泛函理论中的第一性原理计算,气体(CO 2 ,CO,H 2 O,NH 3 )–选择SiGe单层系统进行研究,并选择最敏感的气体和吸附位点(用于CO的Si位点) 2 ,CO的中心站点,NH的Ge站点 3 和H的Ge网站 2 O)被发现。都考虑了吸附能,带隙和电荷转移。通过研究,结果表明SiGe对NH3最敏感,而H 2 O也显示出令人印象深刻的吸附性能。 NH 3 吸附具有较大的吸附能,适合用作气体装置中的传感材料。通过考虑吸附距离,吸附能量和电荷密度差(CDD)图确定了物理吸附模型,物理吸附对气体传感器的应用是有益的。我们的理论结果表明,单层SiGe是用于气体传感应用的有前途的候选材料。

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