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Nanotribological properties of 2-D MoS_2 on different substrates made by atomic layer deposition (ALD)

机译:原子层沉积(ALD)在不同基板上的2-D MoS_2的纳米摩擦学性质

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摘要

The friction influence of 2-D molybdenum disulfide (MoS2) films deposited on different substrates (Si, SiO2 and Al2O3) by atomic layer deposition (ALD) has been investigated. All of the three substrates showed a trend of decreasing friction with increasing number of layers of MoS2, but the friction leveled off for more than 6 layers samples. Comparing these 2-D MoS2 films with each other, MoS2 on the Al2O3 possesses the lowest friction, while MoS2 on the Si possesses the highest one, owing to effect of substrate on the specific self-limiting reaction in ALD process. At the same time, the friction of the monolayer MoS2 is strongest affected by sulfur deficient. As the number of layers increases, the influence of the substrate on the friction of MoS2 can be approximately characterized by the work of adhesion. Greater work of adhesion corresponds to a higher friction force. When the thickness is more than 6 layers, the substrate effect disappears gradually. Moreover, the friction of 2-D MoS2 could be controlled near linearly by changing plasma treatment time within the range from 1 to 20 s, which suggests a possible way for the friction control of 2-D MoS2 on different substrate quasi-qualitatively or even qualitatively.
机译:研究了通过原子层沉积(ALD)沉积在不同衬底(Si,SiO2和Al2O3)上的二维二硫化钼(MoS2)薄膜的摩擦影响。随着MoS2层数的增加,所有这三种基材均显示出减小摩擦的趋势,但对于超过6层的样品,摩擦力趋于平稳。将这些二维MoS2薄膜进行比较,由于衬底对ALD过程中特定的自限反应的影响,Al2O3上的MoS2摩擦最小,而Si上的MoS2摩擦最大。同时,单层MoS2的摩擦受缺硫影响最大。随着层数的增加,衬底对MoS2摩擦的影响可以大致通过粘合功来表征。更大的粘附功对应于更高的摩擦力。当厚度大于6层时,基材效应逐渐消失。此外,通过在1至20 s范围内改变等离子体处理时间,可以将2-D MoS2的摩擦力近似线性地控制,这为在不同基板上定性甚至均匀地控制2-D MoS2的摩擦力提供了一种可能的方法。定性地。

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