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Defect engineered MoSSe Janus monolayer as a promising two dimensional material for NO_2 and NO gas sensing

机译:缺陷工程MoSSe Janus单层作为有前途的二维材料用于NO_2和NO气体传感

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摘要

Gas sensing mechanism of H2S, NH3, NO2 and NO toxic gases on transition metal dichalcogenides based Janus MoSSe monolayers is investigated using the density functional theory. Three types of defects (i) molybdenum vacancy, (ii) selenium vacancy, and (iii) sulfur/selenium vacancy are considered and their formation energy is computed to predict the stability. We noticed that selenium vacancy is the most stable among other defects. The maximum adsorption energy for H2S, NH3, NO2 and NO molecules on pristine Janus MoSSe monolayer are similar to - 0.156 eV, - 0.203 eV, - 0.252 eV, and - 0.117 eV, respectively. NO2 gas molecule dissociates and forms oxygen doped NO adsorption in selenium and sulfur/selenium defect included MoSSe Janus monolayer. The adsorption energy values are similar to - 3.360 eV and - 3.404 eV for Se and S/Se defects included MoSSe layer, respectively. Further, the adsorption of NO2 molecule induced about 1 mu B magnetic moment. In contrast, NO molecule showed chemisorption, whereas H2S and NH3 molecules showed physisorption with their adsorption energies in the range of -0.146 to -0.238 eV and - 0.140 to -0.281 eV, respectively. The adsorption of H2S, NH3, NO2 and NO molecule on the pristine and defected monolayers suggest that selenium and sulfur/selenium vacancy defects are more prominent for NO2 and NO gas molecule adsorption.
机译:利用密度泛函理论研究了基于Janus MoSSe单分子膜的过渡金属二卤化物上H2S,NH3,NO2和NO有毒气体的气敏机理。考虑了三种类型的缺陷(i)钼空位,(ii)硒空位和(iii)硫/硒空位,并计算其形成能以预测稳定性。我们注意到硒空位是其他缺陷中最稳定的。原始Janus MoSSe单层上H2S,NH3,NO2和NO分子的最大吸附能分别类似于-0.156 eV,-0.203 eV,-0.252 eV和-0.117 eV。 NO2气体分子在硒和MoSSe Janus单层中的硫/硒缺陷中解离并形成氧掺杂的NO吸附。对于包括MoSSe层的Se和S / Se缺陷,其吸附能值分别类似于-3.360 eV和-3.404 eV。另外,NO 2分子的吸附引起约1μB的磁矩。相反,NO分子显示化学吸附,而H2S和NH3分子显示物理吸附,其吸附能分别在-0.146至-0.238 eV和-0.140至-0.281 eV范围内。 H2S,NH3,NO2和NO分子在原始和有缺陷的单分子层上的吸附表明硒和硫/硒空位缺陷对于NO2和NO气体分子的吸附更为突出。

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