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首页> 外文期刊>Applied Surface Science >Zn_(1-x)Cd_xS nanowall photoanode prepared via seed layer epitaxial growth method and modified by dual co-catalyst for photoelectrochemical water splitting
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Zn_(1-x)Cd_xS nanowall photoanode prepared via seed layer epitaxial growth method and modified by dual co-catalyst for photoelectrochemical water splitting

机译:Zn_(1-x)Cd_xS纳米壁光阳极通过种子层外延生长法制备并经双助催化剂修饰用于光电化学水分解

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摘要

Exploring novel preparation methods and controlling the morphology as well as the ratio of metal ions are important for the ternary sulfide photoelectrode in photoelectrochemical (PEC) water splitting. In this paper, the novel Zn1-xCdxS nanowall film photoanodes were firstly prepared by seed layer epitaxial growth method, and its x can be adjusted to 0.2, 0.5, 0.8. The effects of different growth solution on seed layer and epitaxial growth layer were studied. The reaction mechanism of synthesis route was investigated. The Zn0.2Cd0.8S nanowall has the best PEC performances than that of other ratios of Zn: Cd, and its photocurrent density is 0.20 mA.cm(-2) at 0.9 V vs. RHE under simulated sunlight. Subsequently, in order to increase the photo-excited carrier separation efficiency of Zn0.2Cd0.8S to promote the oxidation reaction, the hole storage layer (NiOOH) and the hole transfer layer (Co-Pi) were loaded. The photo-excited holes are captured, collected and directed to the Helmholtz layer to react with the electrolyte by the hole storage layer and hole transfer layer, respectively. The photocurrent density of Zn0.2Cd0.8S/NiOOH/Co-Pi photoelectrode is 1.9 times of that of Zn0.2Cd0.8S, which is 0.39 mA.cm(-2) at 0.9 V vs. RHE under simulated sunlight. Zn0.2Cd0.8S/NiOOH/Co-Pi shows excellent stability relative to Zn0.2Cd0.8S, they corrode to 93% and 78% respectively. This photoelectrode construction method and dual layer co-catalyst mechanism provide a new way for PEC water splitting of sulfide.
机译:探索新颖的制备方法并控制形态和金属离子的比例对于三元硫化物光电极在光电化学水分解中具有重要意义。本文首先通过籽晶层外延生长法制备了新型的Zn1-xCdxS纳米壁膜光阳极,其x值可调节为0.2、0.5、0.8。研究了不同生长液对种子层和外延生长层的影响。研究了合成路线的反应机理。 Zn0.2Cd0.8S纳米壁比其他比例的Zn:Cd具有最佳的PEC性能,并且在模拟太阳光下,相对于RHE,在0.9 V下其光电流密度为0.20 mA.cm(-2)。随后,为了提高Zn0.2Cd0.8S的光激发载流子分离效率以促进氧化反应,装载了空穴存储层(NiOOH)和空穴传输层(Co-Pi)。被光激发的空穴被捕获,收集并被引导到亥姆霍兹层,以分别通过空穴存储层和空穴传输层与电解质反应。 Zn0.2Cd0.8S / NiOOH / Co-Pi光电极的光电流密度是Zn0.2Cd0.8S的光电流密度的1.9倍,在模拟太阳光下,相对于RHE在0.9 V时的光电流密度为0.39 mA.cm(-2)。 Zn0.2Cd0.8S / NiOOH / Co-Pi相对于Zn0.2Cd0.8S表现出优异的稳定性,它们分别腐蚀至93%和78%。该光电极的构建方法和双层助催化剂的机理为PEC硫化物的水分解提供了新途径。

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