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Alloying effects on the 1G_0 contact of Au

机译:合金化对Au的1G_0触点的影响

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Alloying effects on the 1G_0 (single-atom) contact of Au has been investigated for four solute elements, Ag, Cu, Pt, and Pd, under bias voltages from 0.2 to 1.0 V. We found that the alloying appreciably affects the formation probability p of the 1G_0 contact, but makes little influence on the average 1G_0 plateau length <τ>. The latter observation strongly suggests that the 1G_0 contact of Au alloys consists of Au atom(s), with no solute atoms participating into the contact. On the other hand, the alloying effect on p was found to be element-dependent. Pd and Pt solutes give rise to a rapid suppression of p with increasing the bias, while the alloying with Cu and Ag yields weak bias dependence of p, which is not much different from that of pure Au.
机译:研究了在0.2到1.0 V的偏置电压下,Ag,Cu,Pt和Pd的四种溶质元素对Au的1G_0(单原子)接触的合金化作用。我们发现合金化显着影响形成概率p 1G_0接触的长度,但对平均1G_0平稳长度<τ>的影响很小。后一观察强烈表明,Au合金的1G_0接触由一个或多个Au原子组成,没有溶质原子参与该接触。另一方面,发现对p的合金化作用取决于元素。 Pd和Pt溶质会随着偏压的增加而迅速抑制p,而与Cu和Ag合金化会产生p的弱偏压依赖性,这与纯Au的相差不大。

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