Monte Carlo simulation of CdTe layers growth on CdTe(0 0 1) and Si(0 0 1) substrates

摘要

A very promising method for thin (of nanoscale thickness) A~(II)B~(VI) layer fabrication is the pulsed laser deposition (PLD) method. The initial stage of the CdTe layer growth on Si(0 0 1) and CdTe(0 0 1) substrates was simulated using the Monte Carlo (MC) procedure. A model for the layer growth included: surface diffusion, absorption and desorption of adatoms, kinetic energy of atoms or ions in the plasma plume and the time distance between consecutive pulses. The shape of the clusters formed clearly depends on these conditions. Layers were obtained for various substrate temperatures. We analysed the morphology and the cross-sections of the layers obtained. The quality of the layers obtained was studied by a fractal description. The results of the simulations allow to determine the correct choice of the layer growth parameters in the real process.