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Investigation of organic impurities adsorbed on and incorporated into electroplated copper layers

机译:研究吸附并结合到电镀铜层中的有机杂质

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At room temperature electroplated copper layers exhibit changes in resistivity, residual stress, and microstructure. This process, known as self-annealing; is intimately linked to the release of organic impurities, which stem from the incorporation of organic additives into the Cu layer in the course of the electroplating process. The behavior of these impurities during self-annealing, represented by the carbon content, could be detected by analytical radio frequency glow discharge optical emission spectrometry (GD-OES) and carrier gas hot extraction (CGHE). The precondition of a quantitative determination is a surface cleaning procedure to remove adsorbed organics from the copper surface. It was observed that at first almost all impurities have to leave the Cu metallization before an accelerated abnormal grain growth can start. The small amount of remaining organic species after self-annealing could be quantified by both examination techniques, GD-OES and CGHE. (c) 2005 Elsevier B.V. All rights reserved.
机译:在室温下,电镀铜层表现出电阻率,残余应力和微观结构的变化。此过程称为自退火;与有机杂质的释放密切相关,有机杂质的释放是由于在电镀过程中将有机添加剂掺入到铜层中而引起的。这些杂质在自退火过程中的行为以碳含量表示,可以通过分析射频辉光放电光发射光谱法(GD-OES)和载气热萃取(CGHE)来检测。进行定量测定的前提是要进行表面清洁,以从铜表面去除吸附的有机物。据观察,首先,几乎所有的杂质都必须离开铜金属化层,然后才能开始加速异常晶粒生长。可以通过GD-OES和CGHE这两种检测技术对自退火后残留的少量有机物进行定量。 (c)2005 Elsevier B.V.保留所有权利。

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