Pulsed laser ablation of indium tin oxide in the nano and femtosecond regime: Characterization of transient species

摘要

Tin doped indium oxide (ITO) is a n-type highly degenerate, wide band-gap semiconductor that is extensively used for many engineering applications. Pulsed laser ablation of indium tin oxide in the nano and femtosecond regime has been performed in our laboratory. Plume diagnostics has been carried out by means of a fast Intensified Coupled Charge Device (ICCD) camera. Optical emission spectroscopy has been applied to characterize the transient species produced in the nano and femtosecond regime. The time evolution of emission lines, in the femto and nanosecond regime, have been compared and discussed. In the mass spectrometry, of the ionized species, the presence of mixed metal oxide clusters has been detected. This fact is an indication that chemical reactions can occur during the plasma expansion or on the ITO surface. (c) 2005 Elsevier B.V. All rights reserved.