Growth and characterization of β-SiC films obtained by fs laser ablation

摘要

We achieved the growth of cubie silicon carbide (SiC) films on (100)Si substrates by pulsed laser deposition (PLD) at moderate temperatures such as 750℃, from a SiC target in vacuum. The as-deposited films are morphologically and structurally characterized by scanning electron microscopy (SEM), conventional and high-resolution transmission electron microscopy (TEM/HRTEM). The morphology of deposited films is dominated by columns nucleated from a thin nanostructured beta silicon carbide (β-SiC) interface layer. The combined effects of columnar growth, tilted facets of the emerging columns and the presence of particulates on the film surface, lead to a rather rough surface of the films.