Electrical characterization of pohcrystalline SiC thin films deposited on fused silica substrates by laser ablation

摘要

Temperature dependence of conductivity and Hall coefficient of polycrystalline SiC films deposited on quartz by laser ablation were investigated. Between 17 - 800K the data show three activation energies, the largest near 75meV being the same for all films. Carrier concentrations are large, in excess of 10~(19)cm~(-3) and mobilities are two orders of magnitude lower than for monocrystalline films.