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Observation of triangle pits in PbSe grown by molecular beam epitaxy

机译:分子束外延生长PbSe中三角形凹坑的观察

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PbSe thin films on BaF_2 (111) were grown by molecular beam epitaxy with different selenium beam flux. Evolution of PbSe surface morphologies with Se/PbSe beam flux ratio (Rf) has been studied by atomic force microscopy and high-resolution X-ray diffraction. Growth spirals with monolayer steps on PbSe surface are obtained using high beam flux ratio, R_f ≥ 0.6. As R_f decreases to 0.3, nano-scale triangle pits are formed on the surface and the surface of PbSe film changes to 3D islands when R_f = 0. Glide of threading dislocations in 〈1 1 0〉 {1 0 0}-glide system and Pb-rich atom agglomerations are the formation mechanism of spiral steps and triangle pits. The nano-scale triangle pits formed on PbSe surface may render potential applications in nano technology.
机译:采用不同的硒束通量,通过分子束外延生长BaF_2(111)上的PbSe薄膜。通过原子力显微镜和高分辨率X射线衍射研究了具有Se / PbSe束流通量比(Rf)的PbSe表面形貌的演变。使用高光束通量比R_f≥0.6,可以获得在PbSe表面上具有单层台阶的生长螺旋。随着R_f减小到0.3,当R_f = 0时,在表面上形成纳米级的三角形凹坑,并且PbSe膜的表面变为3D岛。在<1 1 0> {1 0 0} -glide系统和富铅原子团聚是螺旋台阶和三角形凹坑的形成机理。在PbSe表面上形成的纳米级三角形凹坑可能会在纳米技术中产生潜在的应用。

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