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Non-contact AFM observation of the (root 3x root 3) to (3x3) phase transition on Sn/Ge(111) and Sn/Si(111) surfaces

机译:在Sn / Ge(111)和Sn / Si(111)表面上从(根3x根3)到(3x3)相变的非接触式AFM观察

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The (root 3 x root 3) to (3 x 3) phase transition in Sn/Ge(1 1 1)-(root 3 x root 3)R30 degrees and Sn/Si(1 1 1)-(root 3 x root 3)R30 degrees systems was investigated for the first time using a non-contact atomic force microscope (NC-AFM). Observations show the occurrence of the phase transition with small (3 x 3) domains on the Sn/Ge(1 1 1) surface at low temperatures of 78 and 6 K. However, no evidence was found to support the presence of the phase transition for the Sn/Si(1 1 1) system, even when the temperature was lowered to 6 K. The (3 x 3) domains present two patterns, one hexagonal and the other honeycomb, depending on the tip to sample distance. (c) 2006 Elsevier B.V. All rights reserved.
机译:Sn / Ge(1 1 1)-(root 3 x root 3)R30度和Sn / Si(1 1 1)-(root 3 x root)的(根3 x根3)到(3 x 3)相变3)使用非接触式原子力显微镜(NC-AFM)首次研究了R30度系统。观察表明,在78和6 K的低温下,在Sn / Ge(1 1 1)表面上出现了具有小(3 x 3)畴的相变。但是,没有发现证据支持相变的存在对于Sn / Si(1 1 1)系统,即使温度降低到6K。(3 x 3)畴也呈现两种模式,一个为六边形,另一个为蜂窝状,具体取决于针尖到样品的距离。 (c)2006 Elsevier B.V.保留所有权利。

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