Fabrication Of As-doped P-type Zno Thin Films Using As_2o_3 As Doping Source Material By E-beam Evaporation

摘要

A report on the preparation of p-type As-doped ZnO (ZnO:As) thin films on glass substrate by E-beam evaporation technique is presented. Hall measurement showed that the as-grown films were found to be n-type and the conduction was converted to p-type on annealing in Ar ambient. The films annealed at 400 ℃ in Ar ambient exhibited the hole concentration of 3.63 × 10~(17) cm~(-3), resistivity of 4.08 Ω cm and hole mobility of 4.21 cm~2/Vs, respectively. X-ray photoelectron spectroscopy measurement revealed that the As in the film is in oxidized state. As-related acceptor state is identified from neutral-acceptor bound exciton (A~0, X) and donor-acceptor-pair (DAP) emissions using low temperature photoluminescence.