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Electroless plating of copper on polyimide films modified by surface-initiated atom-transfer radical polymerization of 4-vinylpyridine

机译:通过表面引发的4-乙烯基吡啶原子转移自由基聚合改性的聚酰亚胺膜上的化学镀铜

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摘要

Surface modification of polyimide (PI) films were first carried out by chloromethylation under mild conditions, followed by surface-initiated atom-transfer radical polymerization (ATRP) of 4-vinylpyridine (4VP) from the chloromethylated PI surfaces. The composition and topography of the PI surfaces modified by poly(4-vinylpyridine) (P4VP) were characterized by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), respectively. The P4VP brushes with well-preserved pyridine groups on the PI surface was used not only as the chemisorption sites for the palladium complexes without prior sensitization by SnCl_2 solution during the electroless plating of copper, but also as an adhesion promotion layer to enhance the adhesion of the electrolessly deposited copper to the PI surfaces. The T-peel adhesion strength of the electrolessly deposited copper on the modified PI surface could reach about 6.6 N/cm. Effects of the polymerization time and the activation time in the PdCl_2 solution on the T-peel adhesion strength of the electrolessly deposited copper in the Sn-free process to the modified PI surface were also studied.
机译:首先在温和的条件下通过氯甲基化对聚酰亚胺(PI)膜进行表面改性,然后从氯甲基化的PI表面进行4-乙烯基吡啶(4VP)的表面引发的原子转移自由基聚合(ATRP)。用X射线光电子能谱(XPS)和原子力显微镜(AFM)分别表征了聚(4-乙烯基吡啶)(P4VP)修饰的PI表面的组成和形貌。在PI表面上具有良好保留的吡啶基的P4VP刷不仅用作钯络合物的化学吸附位点,而且在化学镀铜过程中没有事先被SnCl_2溶液敏化,还用作增粘层以增强铜的附着力。化学镀铜到PI表面。在改性的PI表面上化学沉积的铜的T-剥离剥离强度可以达到约6.6N / cm。还研究了在无锡工艺中,PdCl_2溶液中的聚合时间和活化时间对化学沉积铜对改性PI表面的T剥离粘合强度的影响。

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