Quasi-horizontal GaN nanowire array network grown by sublimation sandwich technique

摘要

Quasi-horizontal GaN nanowire array network has been grown on Au-film-coated MgO substrates via a sublimation sandwich technique. These GaN nanowire arrays principally grew along two directions which were perpendicular to each other and nearly parallel to the substrate, forming a regular network. The formation of the nanowire network was a hetero-epitaxial vapor-liquid-solid (VLS) process assisted by Au catalysts and was dependent on the substrates. Transmission electron microscopy revealed that the nanowires were single-crystalline wurtzite GaN. Raman scattering spectrum of the nanowire network presented some new features.