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The Morphology And Optical Properties Of Cr-doped Zno Films Grown Using The Magnetron Co-sputtering Method

机译:磁控共溅射法生长Cr掺杂Zno薄膜的形貌和光学性质

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Undoped ZnO and Zn_(0.9)Cr_(0.1)O films were prepared on Al_2O_3 (0001) substrates using the magnetron co-sputtering technique. X-ray diffraction scans show that all films exhibit nearly single-phase wurtzite structure with c-axis orientation. Both chromium doping and growth ambient have a significant impact on the lattice constants and nucleation processes in ZnO film. A large quantity of subgrains (10 nm in size) has been observed on Zn_(0.9)Cr_(0.1)O film grown under Ar + O_2, while irregular plateau-like grains 40-50 nm in size were observed on Zn_(0.9)Cr_(0.1)O film grown under Ar + N_2. The ultraviolet-visible transmittance and optical bandgap of all films were also examined. The photoluminescence spectra of all films exhibit a broad emission located around 400 nm, which is composed of one weak ultraviolet luminescence and another rather intense near-violet one, as determined by Gaussian peak fitting. The near-violet emission centered on 400 nm might originate from the electron transition between the band tail state levels of surface defects and/or lattice imperfection in the ZnO film.
机译:使用磁控共溅射技术在Al_2O_3(0001)衬底上制备了未掺杂的ZnO和Zn_(0.9)Cr_(0.1)O薄膜。 X射线衍射扫描表明,所有薄膜均具有c轴取向的几乎单相纤锌矿结构。铬的掺杂和生长环境都对ZnO薄膜的晶格常数和成核过程有重要影响。在Ar + O_2下生长的Zn_(0.9)Cr_(0.1)O膜上观察到大量亚晶粒(尺寸为10 nm),而在Zn_(0.9)上观察到尺寸为40-50 nm的不规则的高原状晶粒Cr_(0.1)O薄膜在Ar + N_2下生长。还检查了所有膜的紫外可见透射率和光学带隙。所有薄膜的光致发光光谱均显示出位于400 nm附近的宽发射,该发射由高斯峰拟合确定,由一个弱的紫外发光和另一个相当强的近紫外发光组成。 ZnO薄膜中以400 nm为中心的近紫外发射可能源于表面缺陷的带尾态能级和/或晶格缺陷之间的电子跃迁。

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