机译:SiC表面分解法研究氧对碳纳米管生长的影响
Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu, Fukuoka 804-8550, Japan;
Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu, Fukuoka 804-8550, Japan;
Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu, Fukuoka 804-8550, Japan;
Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu, Fukuoka 804-8550, Japan;
Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu, Fukuoka 804-8550, Japan;
Department of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu, Fukuoka 804-8550, Japan;
carbon nanotubes; surface decomposition method; TEM; oxygen exposure;
机译:在不同氧气压力下通过6H-SiC(000-1)表面分解进行碳纳米管生长的早期STM和XPS研究
机译:SiC表面分解法中离子束辐照对碳纳米管生长的影响
机译:表面结构改性对SiC(0001)表面碳纳米管生长的影响
机译:环境氧对6H-SiC(000-1)表面分解过程中碳纳米管形成初期的影响
机译:多壁碳纳米管的长径比和表面化学性质对多壁碳纳米管/聚合物复合泡沫结构和性能的影响
机译:GaAs分解表面上纳米银和多壁碳纳米管的自组装
机译:SiC表面分解法研究氧对碳纳米管生长的影响
机译:生长相对大的无台阶siC晶体表面的方法