Temperature Effect On The Electrical, Structural And Optical Properties Of N-doped Zno Films By Plasma-free Metal Organic Chemical Vapor Deposition

摘要

N-doped p-type ZnO films were grown by plasma-free metal-organic chemical vapor deposition (MOCVD). The effect of substrate temperature on the electrical, optical, and structural properties of the N-doped ZnO films was investigated by Hall-effect, photoluminescence, X-ray diffraction measurements. The electrical properties of the films were extremely sensitive to the substrate temperature and the conduction type could be reversed in a narrow range from 380 ℃ to 420 ℃. Based on X-ray photoelectron spectroscopy, a high compensation effect in the N-doped ZnO films grown by plasma-free MOCVD was suggested to explain the temperature-dependent phenomenon.