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Morphological And Optical Properties Of Silicon Thin Films By Pld

机译:Pld硅薄膜的形貌和光学性质

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Silicon thin films have been prepared on sapphire substrates by pulsed laser deposition (PLD) technique. The films were deposited in vacuum from a silicon target at a base pressure of 10~(-6)mbar in the temperature range from 400 to 800 ℃. A Q-switched Nd:YAG laser (1064 nm, 5 ns duration, 10 Hz) at a constant energy density of 2 J × cm~(-2) has been used. The influence of the substrate temperature on the structural, morphological and optical properties of the Si thin films was investigated. Spectral ellipsometry and atomic force microscopy (AFM) were used to study the thickness and the surface roughness of the deposited films. Surface roughness values measured by AFM and ellipsometry show the same tendency of increasing roughness with increased deposition temperature.
机译:已经通过脉冲激光沉积(PLD)技术在蓝宝石衬底上制备了硅薄膜。在400〜800℃的温度下,在10〜(-6)mbar的基本压力下,从硅靶真空沉积膜。使用了恒定能量密度为2 J×cm〜(-2)的Q开关Nd:YAG激光器(1064 nm,持续时间5 ns,10 Hz)。研究了衬底温度对Si薄膜结构,形貌和光学性能的影响。使用光谱椭圆仪和原子力显微镜(AFM)研究沉积膜的厚度和表面粗糙度。通过原子力显微镜和椭偏仪测量的表面粗糙度值显示出随着沉积温度升高而粗糙度增加的相同趋势。

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