Electrical Behavior Of Bazr_(0.1)ti_(0.9)o_3 And Bazr_(0.2)ti_(0.8)o_3 Thin Films

摘要

BaZr_(0.1)Ti_(0.9)O_3 and BaZr_(0.2)Ti_(0.8)O_3 (BZT) thin films were deposited on Pt/Ti/LaAlO_3 (100) substrates by radio-frequency magnetron sputtering, respectively. The films were further annealed at 800 ℃ for 30 min in oxygen. X-ray diffraction θ-2θ and φ-scans showed that BaZr_(0.1)Ti_(0.9)O_3 films displayed a highly (h00) preferred orientation and a good cube-on-cube epitaxial growth on the LaAlO_3 (100) substrate, while there are no obvious preferential orientation in BaZr_(0.2)Ti_(0.8)O_3 thin films. The BaZr_(0.1)Ti_(0.9)O_3 films possess larger grain size, higher dielectric constant, larger tunability, larger remanent polarization and coercive electric field than that of BaZr_(0.2)Ti_(0.8)O_3 films. Whereas, BaZr_(0.1)Ti_(0.9)O_3 films have larger dielectric losses and leakage current density. The results suggest that Zr~(4+) ion can decrease dielectric constant and restrain non-linearity. Moreover, the enhancement in dielectric properties of BaZr_(0.1)Ti_(0.9)O_3 films may be attributed to (100) preferred orientation.