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机译:氢气环境下退火温度对ZnO和MgZnO薄膜的电学和光学性质的影响
Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China Craduate School of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China;
Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China No. 16, Dong Nanhu Road, Changchun 130033, PR China;
Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China Craduate School of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China;
Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China;
Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China Craduate School of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China;
Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China Craduate School of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China;
Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China;
Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China;
Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China;
Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China;
thin films; annealing; electrical properties; optical properties;
机译:氮环境下退火温度对P掺杂ZnO薄膜的电学和光学性质的影响
机译:氮环境下退火温度对P掺杂ZnO薄膜的电学和光学性质的影响
机译:退火温度对射频磁控溅射生长立方MgZnO薄膜光学和电学性质的影响
机译:退火温度对ZnO和MgZNO纳米粒子薄膜的电导率变化在温和温度下的退火中的依赖性变化
机译:ZnO和ZnO基薄膜合金退火的函数的温度依赖带边缘分布分析
机译:快速热退火对原子层沉积生长Zr掺杂ZnO薄膜的结构电学和光学性质的影响
机译:室温生长ZnO的电性能分析:氢气环境中的铝薄膜