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Growth and characteristics of ZnO nano-aggregates electrodeposited onto p-Si(111)

机译:电沉积在p-Si(111)上的ZnO纳米聚集体的生长和特性

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摘要

In this paper we study nanocrystalline zinc oxide thin films produced by oxidation of electrodeposited zinc nanolayers on a monocrystalline p-Si(111) substrate. The electrolyte used is ZnCl_2, an aqueous solution of 4×10~(-2)mol/l concentration. Several deposits were made for various current densities, ranging from 13 mA/cm~2 to 44mA/cm~2, flowing through the solution at room temperature. A parametric study enabled us to assess the effect of the current density on nucleation potential and time as well as zinc films structure. The grazing incidence X-ray diffraction (GIXD) revealed that both Zn and ZnO films are polycrystalline and nanometric. After 1 -h oxidation of zinc films at 450 ℃ in the open air, the structural analyses showed that the obtained ZnO films remained polycrystalline with an average crystal size of about 47 nm and with (100), (002) and (101) as preferential crystallographic orientations.
机译:在本文中,我们研究了通过在单晶p-Si(111)衬底上电沉积锌纳米层的氧化而产生的纳米晶氧化锌薄膜。使用的电解质为ZnCl_2,一种浓度为4×10〜(-2)mol / l的水溶液。在室温下流经溶液的各种电流密度(从13 mA / cm〜2到44mA / cm〜2)的几个沉积物。一项参数研究使我们能够评估电流密度对成核电势和时间以及锌膜结构的影响。掠入射X射线衍射(GIXD)表明Zn和ZnO薄膜都是多晶的,并且是纳米级的。 Zn薄膜在露天450℃氧化1 h后,结构分析表明,所得ZnO薄膜仍为多晶,平均晶粒尺寸约为47 nm,其中(100),(002)和(101)为。优先的晶体学取向。

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  • 来源
    《Applied Surface Science》 |2010年第2期|p.616-621|共6页
  • 作者单位

    Institut PRISME, Universite d'Orleans, 21 rue Loigny la Bataille, 28000 Chartres, France,Laboratoire optoelectronique et composants, UFAS 19000, Algeria,Centre Universitaire de Bordj Bou-Arreridj, Departement d'Electronique, 34000 Bordj Bou-Arreridj, Algeria;

    Laboratoire optoelectronique et composants, UFAS 19000, Algeria;

    Institut PRISME, Universite d'Orleans, 21 rue Loigny la Bataille, 28000 Chartres, France;

    Institut PRISME, Universite d'Orleans, 21 rue Loigny la Bataille, 28000 Chartres, France,Centre Universitaire de Bordj Bou-Arreridj, Departement d'Electronique, 34000 Bordj Bou-Arreridj, Algeria;

    Institut PRISME, Universite d'Orleans, 21 rue Loigny la Bataille, 28000 Chartres, France;

    Institute for Superconducting and Electronic Materials, Engineering Faculty, University of Wollongong, 2522 Wollongong, Australia;

    Laboratoire d'Electronique Avancee (LEA), Departement d'Electronique, Universite de Batna, Batna, Algeria;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ZnO; electrodeposition; p-Si(111); nanolayer; nano-aggregates;

    机译:氧化锌;电沉积p-Si(111);纳米层纳米聚集体;
  • 入库时间 2022-08-18 03:07:32

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