机译:居里温度对InMnAs外延结构中表面应变的依赖性
Institute of Electrical Engineering, Slovak Academy of Sciences, 841 04 Bratislava, Slovakia;
rnInstitute of Electrical Engineering, Slovak Academy of Sciences, 841 04 Bratislava, Slovakia;
rnInstitute of Electrical Engineering, Slovak Academy of Sciences, 841 04 Bratislava, Slovakia;
rnInstitute of Electrical Engineering, Slovak Academy of Sciences, 841 04 Bratislava, Slovakia;
rnInstitute of Electrical Engineering, Slovak Academy of Sciences, 841 04 Bratislava, Slovakia;
rnInstitute of Experimental Physics SAS, Kosice, Slovakia;
rnInstitute of Nanoscience of Aragon, University of Zaragoza, Spain;
magnetic semiconductors; quantum dots; curie temperature; strain;
机译:铁电外延Y掺杂HFO_2薄膜在铁芯温度的厚度和方向依赖性
机译:居里温度以下水热外延制备纳米外延PbTiO_3岛中初始极化方向的尺寸依赖性
机译:Sr_(1-x)Ba_xTiO_3薄膜外延居里温度的应变工程
机译:BiFeO3外延膜的晶体和微区结构的生长温度和厚度依赖性
机译:滑水行星模型中的Madden-Julian振荡结构和海面温度依赖性
机译:在不同温度下通过脉冲激光沉积在AlN / Si异质结构上外延生长的GaN薄膜的微观结构和生长机理
机译:居里温度对外延(Ga,mn)as厚度的依赖性 电影