Influence of annealing temperature on the photoluminescence properties of ZnO quantum dots

摘要

The properties of ZnO quantum dots (QDs) synthesized by the sol-gel process are reported. The primary focus is on investigating the origin of the visible emission from ZnO QDs by the annealing process. The X-ray diffraction results show that ZnO QDs have hexagonal wurtzite structure and the QD diameter estimated from Debye-Scherrer formula is 8.9 nm, which has a good agreement with the results from transmission electron microscopy images and the theoretical calculation based on the Potential Morphing Method. The room-temperature photoluminescence spectra reveal that the ultraviolet excitation band has a red shift. Meanwhile, the main band of the visible emission shifts to the green luminescence band from the yellow luminescence one with the increase of the annealing temperature. A lot of oxygen atoms enter into Zn vacancies and form oxygen antisites with increasing temperature. That is probably the reason for the change of the visible emission band.