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Cu-doped SiO_xC_y nanostructures induced by radio frequency plasma jet using hexamethyldisiloxane

机译:六甲基二硅氧烷射频等离子体射流诱导的Cu掺杂SiO_xC_y纳米结构

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摘要

Formation of Cu-doped SiO_xC_y nanostructures has been studied by using hexamethyldisiloxane (HMDS0)/H2/Ar radio frequency (RF) plasma, where a copper tube was utilized as power electrode to generate plasma jet. Tree-like nanostructures were obtained at low concentration of HMDSO. One can find the initial vertical growth of nanowires (NWs) and the spherical structures on sidewalls of the bended NWs, which were attributed to the vertical gas flow and secondary catalyzing due to copper from the ambience, respectively. However, the fragments with big mass were too many to synthesize nanostructure at high concentration of HMDSO. More Cu particles were transported to the substrate while an RF bias was applied to the substrate, which restrained the NWs growth catalyzed by Au and resulted in the formation of acaleph-like nanostructures.
机译:通过使用六甲基二硅氧烷(HMDS0)/ H2 / Ar射频(RF)等离子体研究了掺杂Cu的SiO_xC_y纳米结构的形成,其中铜管用作功率电极产生等离子体射流。在低浓度的HMDSO中获得树状纳米结构。可以发现纳米线(NWs)的初始垂直生长以及弯曲的NWs侧壁上的球形结构,这分别归因于垂直气流和由于环境中的铜引起的二次催化。但是,大量的碎片太多,无法在高浓度的HMDSO上合成纳米结构。当向衬底施加RF偏压时,更多的Cu颗粒被传输到衬底,这抑制了Au催化的NWs生长并导致形成了acaleph状纳米结构。

著录项

  • 来源
    《Applied Surface Science》 |2011年第3期|p.1149-1152|共4页
  • 作者单位

    CAS Key Laboratory of Basic Plasma Physics, Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

    CAS Key Laboratory of Basic Plasma Physics, Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

    CAS Key Laboratory of Basic Plasma Physics, Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

    CAS Key Laboratory of Basic Plasma Physics, Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

    CAS Key Laboratory of Basic Plasma Physics, Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

    CAS Key Laboratory of Basic Plasma Physics, Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Cu-doped SiO_xC_y nanostructure; radio frequency; plasma jet;

    机译:Cu掺杂的SiO_xC_y纳米结构无线电频率;等离子射流;
  • 入库时间 2022-08-18 03:07:10

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