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Investigation of chemical bath deposition of CdO thin films using three different complexing agents

机译：使用三种不同的络合剂研究CdO薄膜的化学浴沉积

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摘要

Chemical bath deposition of CdO thin films using three different complexing agents, namely ammonia, ethanolamine, and methylamine is investigated. CdSO_4 is used as Cd precursor, while H_2O_2 is used as an oxidation agent. As-grown films are mainly cubic CdO_2, with some Cd(OH)2 as well as CdO phases being detected. Annealing at 400 ℃ in air for 1 h transforms films into cubic CdO. The calculated optical band gap of as-grown films is in the range of 3.37-4.64 eV. Annealed films have a band gap of about 2.53 eV. Rutherford backscattering spectroscopy of as-grown films reveals cadmium to oxygen ratio of 1.00:1.74±0.01 while much better stoichiometry is obtained after annealing, in accordance with the X-ray diffraction results. A carrier density as high as 1.89 × 10~(20) cm~(-3) and a resistivity as low as 1.04 × 10~(-2) Ω-cm are obtained.
机译：研究了使用三种不同的络合剂（氨，乙醇胺和甲胺）对CdO薄膜进行化学浴沉积的过程。 CdSO_4用作Cd前体，而H_2O_2用作氧化剂。成膜后的薄膜主要是立方CdO_2，并检测到一些Cd（OH）2和CdO相。在空气中于400℃退火1 h，将薄膜转变为立方CdO。计算出的成膜薄膜的光学带隙在3.37-4.64 eV的范围内。退火膜具有约2.53eV的带隙。根据X射线衍射结果，所生长薄膜的Rutherford背散射光谱表明，镉与氧之比为1.00：1.74±0.01，而退火后可获得更好的化学计量。获得了高达1.89×10〜（20）cm〜（-3）的载流子密度和低至1.04×10〜（-2）Ω-cm的电阻率。

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  • 来源
    《Applied Surface Science》 |2011年第22期|p.9237-9242|共6页
  • 作者

    Hani Khallaf; Chia-Ta Chen; Liann-Be Chang; Oleg Lupan; Aniruddha Dutta; Helge Heinrich; A.Shenouda; Lee Chow;

  • 作者单位

    Department of Physics, University of Central Florida, Orlando, FL 32816, USA;

    Graduate Institute of Electro-Optical Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan,Green Technology Research Center, Chang Gung University, Kweishan, Taoyuan 333, Taiwan;

    Graduate Institute of Electro-Optical Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan,Green Technology Research Center, Chang Gung University, Kweishan, Taoyuan 333, Taiwan;

    Department of Physics, University of Central Florida, Orlando, FL 32816, USA,Department of Microelectronics and Semiconductor Devices, Technical University of Moldova, 168 Stefan cel Mare Boulevard, MD-2004 Chisinau, Republic of Moldova;

    Department of Physics, University of Central Florida, Orlando, FL 32816, USA,Advanced Materials Processing and Analysis Centre, Department of Mechanical, Materials, and Aerospace Engineering, University of Central Florida, Orlando, FL 32816, USA;

    Department of Physics, University of Central Florida, Orlando, FL 32816, USA,Advanced Materials Processing and Analysis Centre, Department of Mechanical, Materials, and Aerospace Engineering, University of Central Florida, Orlando, FL 32816, USA;

    Central Metallurgical R&D Institute (CMRDI), Tebbin, P.O. Box 87, Helwan, Egypt;

    Advanced Materials Processing and Analysis Centre, Department of Mechanical, Materials, and Aerospace Engineering, University of Central Florida, Orlando, FL 32816, USA,Department of Physics, University of Central Florida, 4000 Central Florida Blvd., Orlando, FL 32816, USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    CdO; thin films; group Ⅱ-Ⅵ semiconductors; chemical bath deposition;

    机译：镉薄膜;Ⅱ-Ⅵ族半导体;化学浴沉积;
  • 入库时间 2022-08-18 03:07:08

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