Microstructural evolution upon annealing in Ar-implanted Si

摘要

The annealing effects of crystalline silicon (Si) implanted with argon (Ar) ions at a dose of 2 x 10~(16) Ar~+/cm~2 at room temperature and subsequently annealed at 400-1100 ℃ for 30 min were investigated. The samples were analyzed by transmission electron microscopy and Raman spectroscopy. Before and after annealing up to 600 ℃, an amorphous layer is formed but Ar bubbles are not observed in the damage layer. After annealing at 800 ℃. argon bubbles are observed together with extended defects. The damage layer evolves into a polycrystalline structure. After annealing at 1100℃; exfoliation occurs on the sample surface, and microtwin lamellas form in the damage layer. Raman scattering revealed that a strong recrystallization occurs from 600 ℃ to 800 ℃. The results were compared with the case of helium implantation, with particular focus on bubble formation mechanisms.