机译:镁膜厚度和退火温度对磁控溅射在硅(111)衬底上形成Mg_2Si膜的影响
Institute of Advanced Optoelectronic Materials and Technology, College of Science, Cuizhou University, Guiyang 550025, PR China;
Institute of Advanced Optoelectronic Materials and Technology, College of Science, Cuizhou University, Guiyang 550025, PR China;
Institute of Advanced Optoelectronic Materials and Technology, College of Science, Cuizhou University, Guiyang 550025, PR China;
Institute of Advanced Optoelectronic Materials and Technology, College of Science, Cuizhou University, Guiyang 550025, PR China;
Institute of Advanced Optoelectronic Materials and Technology, College of Science, Cuizhou University, Guiyang 550025, PR China;
Institute of Advanced Optoelectronic Materials and Technology, College of Science, Cuizhou University, Guiyang 550025, PR China;
magnesium silicide; thin film; annealing; diffusion; x-ray diffraction; scanning electron microscopy;
机译:衬底,膜厚和温度对磁控溅射沉积Mo /衬底热发射率的影响
机译:沉积后退火温度对通过射频磁控溅射技术沉积在硅基板上的CeO(2)薄膜的影响
机译:射频磁控溅射在低温加热的SiO_2 / Si衬底上对La_(0.7)Sr_(0.3)M / InO_3薄膜进行高温后退火的影响
机译:ZnO膜在(0001)A1_2O_3和(111)Si衬底上沉积的ZnO膜通过MOCVD用作缓冲层的ZnO薄膜生长的GaN层
机译:射频反应磁控溅射在低温下沉积在硅上的压电氮化铝薄膜的声波器件特性
机译:磁控溅射沉积非晶碳膜的基体温度相关的微观结构和电子诱导的二次电子发射特性
机译:硅基板上的单晶状GdNdOx薄膜,通过磁控溅射和晶体种子层的高温退火应用