机译:通过热蒸发在硅和多孔硅上生长的高质量GaN纳米线
Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia;
Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia;
Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia;
Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia;
Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia;
thermal evaporation growth; GaN nanowires; porous silicon;
机译:通过热蒸发在多孔GaN衬底上制备GaN纳米线
机译:通过热蒸发法在多孔硅/硅(PS / Si(111))上生长的ZnO纳米柱的制备和结构表征
机译:通过热蒸发法在多孔硅/硅(PS / Si(111))上生长的ZnO纳米柱的制备和结构表征
机译:热蒸发表征在PSI,PZNO,PSI,PZNO中生长的GaN纳米线及PSI(111)基材上的鉴别
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:在100硅晶片上的多孔氧化铝模板中生长的高度组织化和密集的垂直硅纳米线阵列
机译:GaN热蒸发生长的ß-Ga_2O_3纳米线中蓝色和紫外线发射的CL研究